منابع مشابه
Scalable high-power, high-speed CW VCSEL arrays
A demonstration of a high-power, high-speed 980 nm vertical-cavity surface-emitting laser array with continuous-wave power of greater than 120 mW and frequency response over 7.5 GHz at room temperature is reported. Experimental results show that copper plating the array elements and flip-chip bonding provides effective thermal management as well as offering uniform current distribution at micro...
متن کاملHigh-Order-Mode VCSEL With 12mW Output Power
We report high-power single-higher-order transverse mode emission of a large-area oxideconfined rectangular-shaped VCSEL with a multi-spot shallow surface relief. Both a recordhigh output power of 12mW and a record-low differential series resistance of 18 ohms are achieved. Stable single-higher-order transverse mode emission with a side-mode suppression ratio exceeding 35 dB is maintained up to...
متن کاملHigh power VCSEL array pumped Q-switched Nd:YAG lasers
Solid-state lasers pumped by high-power two-dimensional arrays of vertical-cavity surface-emitting lasers (VCSELs) were investigated. Both end-pumping and side-pumping schemes of Nd:YAG lasers with high power kW-class 808 nm VCSEL pump modules were implemented. For one application 10 mJ blue laser pulses were obtained from a frequencydoubled actively Q-switched VCSEL-array dual side-pumped Nd:Y...
متن کاملemittance control in high power linacs
چکیده این پایان نامه به بررسی اثر سیم پیچ مغناطیسی و کاوه یِ خوشه گر با بسامد رادیویی بر هاله و بیرونگراییِ باریکه هایِ پیوسته و خوشه ایِ ذرات باردار در شتابدهنده های خطیِ یونی، پروتونی با جریان بالا می پردازد و راه حل هایی برای بهینه نگهداشتن این کمیتها ارایه می دهد. بیرونگرایی یکی از کمیتهای اساسی باریکه هایِ ذرات باردار در شتابدهنده ها است که تاثیر قابل توجهی بر قیمت، هزینه و کاراییِ هر شتابدهند...
1550 nm high contrast grating VCSEL.
We demonstrate an electrically pumped high contrast grating (HCG) VCSEL operating at 1550 nm incorporating a proton implant-defined aperture. Output powers of >1 mW are obtained at room temperature under continuous wave operation. Devices operate continuous wave at temperatures exceeding 60 degrees C. The novel device design, which is grown in a single epitaxy step, may enable lower cost long w...
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ژورنال
عنوان ژورنال: Laser Technik Journal
سال: 2014
ISSN: 1613-7728
DOI: 10.1002/latj.201400024